| Fabricant | No de pièce | Fiches technique | Description |

SCHOTT CORPORATION
|
34042 |
13Kb/1P |
INDUCTOR, 330 關H, 1 ADC, BUCK |

California Eastern Labs
|
NX6350GP |
903Kb/6P |
1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE |

Renesas Technology Corp
|
NX6350EP |
138Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE |
| NX6353EP |
247Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE |
| NX6350GP |
129Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE |
| NX6352GP |
286Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE |
| NX6351GP |
266Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE |

California Eastern Labs
|
NX6352GP |
1Mb/6P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE |

Weidmuller
|
2425410000 |
560Kb/4P |
ENERGY METER 330 |

Socay Electornics Co., ...
|
SZ1110A |
149Kb/5P |
SMA4728A - SZ1330A Series VZ: 3.3 To 330 V PD: 1 W |

Micro Commercial Compon...
|
SMA1EZ110D5HE3 |
389Kb/4P |
1 W Glass Passivated Junction Silicon Zener Diode 110-330 Volts |
| SMA1EZ110D5 |
370Kb/4P |
1 W Glass Passivated Junction Silicon Zener Diode 110-330 Volts |

California Eastern Labs
|
NX6350EP |
1,013Kb/6P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION |
| NX6353EP |
714Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION |
| NX6351GP |
938Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION |

KR Electronics, Inc.
|
3224-N |
67Kb/3P |
330 MHz Center Frequency |

List of Unclassifed Man...
|
LC1F330 |
72Kb/3P |
330 A - without coil |

TriQuint Semiconductor
|
855730 |
431Kb/5P |
330 MHz SAW Filter |
| 855730 |
433Kb/5P |
330 MHz SAW Filter |

PHOENIX CONTACT
|
2988191 |
69Kb/5P |
Controller - ILC 330 PN |