| Fabricant | No de pièce | Fiches technique | Description |

California Eastern Labs
|
NX6350GP |
903Kb/6P |
1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE |

TRIAD MAGNETICS
|
VPP16-310 |
45Kb/1P |
VPP16-310 |

Varitronix internationa...
|
VIM-310 |
28Kb/1P |
VIM-310 |

Sharp Corporation
|
LR38575 |
94Kb/9P |
Timing Generator IC for 1 310 k-pixel CCD |
| LR38574 |
64Kb/9P |
Timing Generator IC for 1 090 k/1 310 k-pixel CCDs |

Renesas Technology Corp
|
NX6350GP |
129Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE |
| NX6350EP |
138Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE |
| NX6352GP |
286Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE |
| NX6351GP |
266Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE |

California Eastern Labs
|
NX6352GP |
1Mb/6P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE |

Renesas Technology Corp
|
NX6353EP |
247Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE |

Sharp Corporation
|
LZ23J3V |
126Kb/15P |
1/2.7-type Interline Color CCD Area Sensor with 1 310 k Pixels |

Renesas Technology Corp
|
NX6314EH |
205Kb/7P |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE |

List of Unclassifed Man...
|
OSD070TN84 |
979Kb/27P |
310 Genius Drive |

Kemet Corporation
|
R463N410040H1M |
50Kb/1P |
R46 310 VAC 125C, Film, Metallized Polypropylene, Safety, 1 uF, 20%, 310 VAC (X2), 630 VDC, 125째C, Lead Spacing = 22.5mm |
| R463N410040N2M |
226Kb/1P |
R46 310 VAC, Film, Metallized Polypropylene, Safety, 1 uF, 20%, 310 VAC (X2), 630 VDC, 110°C, Lead Spacing = 22.5mm 10/20/2022 |

California Eastern Labs
|
NX5330SA |
184Kb/5P |
1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS |

Kemet Corporation
|
R463R410040M1M |
226Kb/1P |
R46 310 VAC, Film, Metallized Polypropylene, Safety, 1 uF, 20%, 310 VAC (X2), 630 VDC, 110°C, Lead Spacing = 27.5mm 10/20/2022 |

California Eastern Labs
|
NX6351GP |
938Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION |
| NX6350EP |
1,013Kb/6P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION |