| Fabricant | No de pièce | Fiches technique | Description |

Semtech Corporation
|
GX3290 |
1Mb/47P |
290 x 290 3.5Gb/s Crosspoint Switch |

California Eastern Labs
|
NX6350GP |
903Kb/6P |
1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE |

Renesas Technology Corp
|
NX6350GP |
129Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE |

Zarlink Semiconductor I...
|
KESRX01 |
185Kb/11P |
290 - 460MHz ASK Receiver |

LUMEX INC.
|
LDS-AA106RI |
54Kb/1P |
290 E. HELEN ROAD |
| SSB-LX02SRC |
45Kb/1P |
290 E HELLEN ROAD |

Renesas Technology Corp
|
NX6351GP |
266Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE |

California Eastern Labs
|
NX6352GP |
1Mb/6P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE |

Renesas Technology Corp
|
NX6350EP |
138Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE |

TAI-SAW TECHNOLOGY CO.,...
|
TA0544A |
457Kb/4P |
SAW Filter 290 MHz |

Renesas Technology Corp
|
NX6352GP |
286Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE |
| NX6353EP |
247Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE |

California Eastern Labs
|
NX6351GP |
938Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION |
| NX6350EP |
1,013Kb/6P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION |
| NX6353EP |
714Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION |

Texas Instruments
|
THS4011 |
1Mb/35P |
290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS |
| THS4012CDGNR |
1Mb/35P |
290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS |

LUMEX INC.
|
LCM-S01604DSF |
57Kb/1P |
290 E. HELLEN ROAD PALTINE ILLINOIS 60067 |

Texas Instruments
|
THS4011 |
439Kb/30P |
290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS |
| THS4011IDGNR |
1Mb/35P |
290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS |