| Fabricant | No de pièce | Fiches technique | Description |

VIGO Photonics S.A.
|
PVI-4-1 |
671Kb/2P |
PVI-4-1×1-TO39-NW-36 2.4 – 4.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detector 11/04/2022 |
| PVI-2TE-4-1 |
701Kb/2P |
PVI-2TE-4-1×1-TO8-wAl2O3-36 2.4 – 4.3 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector 25/09/2020 |
| PVI-5-1 |
671Kb/2P |
PVI-5-1×1-TO39-NW-36 2.4 – 5.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detector 25/09/2020 |
| PVA-2TE-4.5-1 |
725Kb/2P |
PVA-2TE-4.5-1×1-TO8-wAl2O3-70 – ENGINEERING SAMPLE 2.3 – 4.9 μm InAsSb two-stage thermoelectrically cooled photovoltaic detector 07/09/2021 |
| PVI-2TE-6-1 |
723Kb/2P |
PVI-2TE-6-1×1-TO8-wZnSeAR-36 3.0 – 6.7 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector 25/09/2020 |
| PCIAS-3TE-12-1 |
723Kb/2P |
PCIAS-3TE-12-1×1-TO8-wZnSeAR-36 – ENGINEERING SAMPLE Type II superlattice, three-stage thermoelectrically cooled, optically immersed photoconductive detector 20/07/2021 |
| UM-I-6 |
825Kb/2P |
3.0 – 6.7 μm and DC – 1 MHz HgCdTe universal IR detection module with optically immersed photovoltaic detector 14/09/2020 |
| QM-5 |
783Kb/2P |
3.5 – 6.0 μm and DC – 1 MHz HgCdTe four-channel IR detection module with photovoltaic quadrant geometry detector 16/08/2021 |
| PC-9-AF1 |
774Kb/2P |
PC-9-AF1×1-TO39-NW-90 – ENGINEERING SAMPLE HgCdTe ambient temperature photoconductive detector with anti-fringing technology 30/09/2021 |
| PCAS-2TE-9-1 |
717Kb/2P |
PCAS-2TE-9-1×1AR-TO8-wZnSeAR-70 – ENGINEERING SAMPLE Type II superlattice, two-stage thermoelectrically cooled, photoconductive detector 14/04/2021 |
| QM-10.6 |
880Kb/2P |
3.0 – 12.0 μm and DC – 1 MHz HgCdTe four-channel IR detection module with photovoltaic quadrant geometry multiple junction detector 16/08/2021 |
| 4EM-5 |
807Kb/2P |
ENGINEERING SAMPLE 3.5 – 6.0 μm and DC – 1 MHz HgCdTe four-channel IR detection module with photovoltaic four-element linear detector 16/08/2021 |