DYNAMIC DIFFERENTIAL HALL EFFECT SENSOR Datasheet(PDF) - STC6332

Fabricant	No de pièce	Fiches technique	Description
Stanson Technology	STC6332	421Kb/9P	The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
	ST2319SRG	229Kb/8P	ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STP9235	331Kb/6P	STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	ST2318SRG	221Kb/7P	ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STP4403	321Kb/6P	STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP9434	314Kb/6P	STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	ST3422A	338Kb/6P	The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STN4346	352Kb/7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4426	362Kb/6P	STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP6308	420Kb/6P	STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN1810	966Kb/7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb/7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4438	269Kb/6P	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb/6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4546	363Kb/6P	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4850	532Kb/6P	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4435A	311Kb/6P	STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4931	334Kb/6P	STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	ST2304SRG	630Kb/6P	ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST2341A	582Kb/6P	ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

DYNAMIC DIFFERENTIAL HALL EFFECT SENSOR Fiches technique, PDF

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