AT746 Phase Control Thyristor - Datasheet Summary

Parameter	Symbol/Description	Value	Units	Notes/Conditions
Absolute Maximum Ratings
Peak Reverse Voltage	VRRM	1600	V
Repetitive Peak Reverse Voltage	VRRM	1800	V
Peak Forward Voltage	VFM	30	V
Peak Forward Current	IFM	1800	A
Surge Forward Current	ITSM	25	kA	10ms
Average Forward Current	IF(AV)	1404	A	Tc = 85°C
		1800	A
Junction Temperature	Tj	125	°C	Max
Storage Temperature	Tstg	-40 to +150	°C
Electrical Characteristics (Tj = 25°C unless otherwise specified)
On-State Voltage	VT	2.80	V	IT = 5600A
Threshold Voltage	VTO	1.10	V
On-State Slope Resistance	rT	0.270	mΩ
Holding Current	IH	500	mA	VD = 5V
Latching Current	IL	2	mA	VD = 5V, tp = 30µs
Gate Trigger Voltage	VGT	3.50	V	VD = 5V
Gate Trigger Current	IGT	300	mA	VD = 5V
Non-Trigger Gate Voltage	VGD	0.25	V	VD = VRRM
Switching Characteristics
Critical Rate of Rise of On-State Current	di/dt	200	A/µs	From 75% VDRM to 1800A
Critical Rate of Rise of Off-State Voltage	dv/dt	500	V/µs	Linear ramp to 70% VDRM
Gate Controlled Delay Time	td	1	µs	VD = 100V, gate source 25V, 10W, tr = 0.5 µs
Circuit Commutated Turn-Off Time	tq	350	µs	dv/dt = 20V/µs, linear to 75% VDRM
Thermal Characteristics
Junction-to-Heatsink Thermal Resistance	Rth(j-h)	17.0	°C/W
Case-to-Heatsink Thermal Resistance	Rth(c-h)	3.0	°C/W
Other
Peak Gate Power Dissipation	PGM	150	W	Pulse width 100µs
Average Gate Power Dissipation	PG	2	W
Mass		1000	g
Cathode Terminal Type		DIN 46244 - A 4.8 - 0.8
Gate Terminal Type		AMP 60598 - 1

Important Notes:

️· This table is based on the information provided in the text. Some information might be missing.
️· Always refer to the official datasheet for complete and accurate specifications.
️· The conditions under which these parameters are measured are important for proper application of the device.