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    • Part No.SI4464DY
    ManufacturerVISHAY
    Size53 Kbytes
    Pages5 pages
    DescriptionN-Channel 200-V (D-S) MOSFET
    Datasheet Summary with AI

    # Si4464DY N-Channel MOSFET

    ## Features
    · TrenchFET Power MOSFET
    · PWM Optimized (Lowest Qg and Low Rg)
    · Primary Side Switch Applications

    ## Electrical Characteristics
    · VDS (Drain-Source Voltage): 200V
    · rDS(on) (Drain-Source On-State Resistance): 0.240 @ VGS = 10V, 0.260 @ VGS = 6.0V
    · ID (Continuous Drain Current): 2.2A @ 25°C, 1.7A @ 70°C
    · VGS(th) (Gate Threshold Voltage): 2.0 - 4V
    · PD (Maximum Power Dissipation): 2.5W @ 25°C, 1.6W @ 70°C

    ## Thermal Resistance
    · RthJA (Maximum Junction-to-Ambient): 37°C/W (typical), 50°C/W (max)
    · RthJF (Maximum Junction-to-Foot): 17°C/W (typical), 21°C/W (max)

    ## Dynamic Characteristics
    · Qg (Total Gate Charge): 12-18 nC

    · Turn-On Delay Time (td(on)): 10-15 ns
    · Rise Time (tr): 12-20 ns

    ## Absolute Maximum Ratings
    · VDS: 200V
    · VGS: ±20V
    · ID: 2.2A (25°C), 1.7A (70°C)
    · IDM (Pulsed Drain Current): 8A
    · EAS (Single Avalanche Energy): 0.45 mJ

    ## Package
    · SO-8

    # Si4464DY N-Channel MOSFET

    ## Features
    · TrenchFET Power MOSFET
    · PWM Optimized (Lowest Qg and Low Rg)
    · Primary Side Switch Applications

    ## Electrical Characteristics
    · VDS (Drain-Source Voltage): 200V
    · rDS(on) (Drain-Source On-State Resistance): 0.240 @ VGS = 10V, 0.260 @ VGS = 6.0V
    · ID (Continuous Drain Current): 2.2A @ 25°C, 1.7A @ 70°C
    · VGS(th) (Gate Threshold Voltage): 2.0 - 4V
    · PD (Maximum Power Dissipation): 2.5W @ 25°C, 1.6W @ 70°C

    ## Thermal Resistance
    · RthJA (Maximum Junction-to-Ambient): 37°C/W (typical), 50°C/W (max)
    · RthJF (Maximum Junction-to-Foot): 17°C/W (typical), 21°C/W (max)

    ## Dynamic Characteristics
    · Qg (Total Gate Charge): 12-18 nC
    · Turn-On Delay Time (td(on)): 10-15 ns
    · Rise Time (tr): 12-20 ns

    ## Absolute Maximum Ratings
    · VDS: 200V
    · VGS: ±20V
    · ID: 2.2A (25°C), 1.7A (70°C)
    · IDM (Pulsed Drain Current): 8A
    · EAS (Single Avalanche Energy): 0.45 mJ

    ## Package
    · SO-8

    Part No.SI4464DY
    ManufacturerVISHAY
    Size53 Kbytes
    Pages5 pages
    DescriptionN-Channel 200-V (D-S) MOSFET
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