# isc Silicon PNP Power Transistors 2SB503

## Description

· Collector-Emitter Breakdown Voltage: V(BR)CEO = -50V (Min)
· High Power Dissipation: PC = 25W (Max) @ TC = 25°C

## Applications

· Designed for audio power amplifier and regulator applications.

## Absolute Maximum Ratings (Ta=25°C)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	-70	V
VCEO	Collector-Emitter Voltage	-50	V
VEBO	Emitter-Base Voltage	-8	V
IC	Collector Current (Continuous	-3	A
PC	Collector Power Dissipation (@Ta=25°C)	1.5	W
PC	Collector Power Dissipation (@TC=25°C)	25	W
TJ	Junction Temperature	150	°C
Tstg	Storage Temperature	-65~150	°C

## Electrical Characteristics (Tj=25°C unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= -30mA; IB= 0	-50			V
V(BR)CBO	Collector-Base Breakdown Voltage	IC= -0.1mA; IE= 0	-70			V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE= -1mA; IC= 0	-8			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= -3A; IB= -0.3A		-1.5	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= -3A; IB= -0.3A		-1.8	V
ICBO	Collector Cutoff Current	VCB= -50V; IE= 0		-10	μA
IEBO	Emitter Cutoff Current	VEB= -8V; IC= 0		-100	μA
hFE-1	DC Current Gain	IC= -0.5A; VCE= -5V	30		280
hFE-2	DC Current Gain	IC= -2.5A; VCE= -5V	15
COB	Output Capacitance	IE= 0; VCB= -10V; f= 1MHz		200		pF

## hFE Classifications

R	O	Y
30-70	50-140	100-280

## Website

· www.iscsemi.cn