# HV200F04 - 4.0kV 200mA HIGH VOLTAGE DIODE

## General Description
️· High reliability, resin molded high voltage diode.
️· Sealed multilayed mesa type silicon chip by epoxy resin.
️· Small size package.

## Features
️· High speed switching
️· High Current
️· High surge resisitivity for CRT discharge
️· High reliability design
️· High Voltage

## Applications
️· X light Power supply
️· Laser
️· Voltage doubler circuit
️· Microwave emission power

## Maximum Ratings
️· Repetitive Peak Reverse Voltage (VRRM): 4.0 kV
️· Average Output Current (IO): 200 mA (at Ta=25°C, Resistive Load)
️· Surge Current (IFSM): 10 A (peak)
️· Junction Temperature (Tj): 125 °C
️· Case Temperature (Tc): 125 °C
️· Storage Temperature (Tstg): -40 to +125 °C

## Electrical Characteristics (Ta=25°C unless otherwise specified)
️· Maximum Forward Voltage Drop (VF): 13 V (at 25°C, IF = IF(AV))
️· Maximum Reverse Current (IR1): 2.0 uA (at 25°C, VR = VRRM)
️· Maximum Reverse Current (IR2): 15 uA (at 100°C, VR = VRRM)
️· Maximum Reverse Recovery Time (Trr): 100 ns (at 25°C)
️· Junction Capacitance (Cj): 15 pF (at 25°C, VR=0V, f=1MHz)

## Markings
️· Cathode Mark: "o" with adjacent markings (see datasheet)
️· Lot No.: GETE ELECTRONICS CO., LTD.

## Manufacturer
️· GETE ELECTRONICS CO., LTD.
️· Website: Http://www.getedz.com
️· Email: sales@getedz.com