# isc Silicon PNP Power Transistor 2SB634

## Description

· Collector-Emitter Breakdown Voltage: V(BR)CEO = -100V (Min)
· High Power Dissipation

## Applications

· Designed for low frequency power amplifier applications.

## Absolute Maximum Ratings (Ta=25℃)

· VCBO: -120 V (Collector-Base Voltage)
· VCEO: -120 V (Collector-Emitter Voltage)
· VEBO: -6 V (Emitter-Base Voltage)
· IC (Continuous Collector Current): -7 A
· ICM (Peak Collector Current): -10 A
· PC (Collector Power Dissipation): 60 W @ TC=25℃
· TJ (Junction Temperature): 150 ℃
· Tstg (Storage Temperature Range): -55~150 ℃

## Electrical Characteristics (TC=25℃ unless otherwise specified)

· V(BR)CBO (Collector-Base Breakdown Voltage): -120 V (IC= -5mA; IE= 0)
· V(BR)CEO (Collector-Emitter Breakdown Voltage): -120 V (IC= -50mA; RBE= ∞)
· V(BR)EBO (Emitter-Base Breakdown Voltage): -6 V (IE= -5mA; IC= 0)
· VCE(sat) (Collector-Emitter Saturation Voltage): -1.5 V (IC= -3A; IB= -0.3A)
· ICBO (Collector Cutoff Current): -0.1 mA (VCB= -80V; IE= 0)
· IEBO (Emitter Cutoff Current): -0.1 mA (VEB= -4V; IC= 0)
· hFE-1 (DC Current Gain): 40-320 (IC= -1A; VCE= -5V)
· hFE-2 (DC Current Gain): 20 (IC= -3A; VCE= -5V)
· fT (Current-Gain—Bandwidth Product): 15 MHz (IC= -1A; VCE= -5V)

## hFE-1 Classifications

C	D	E	F
40-80	60-120	100-200	160-320

## Website
· www.iscsemi.cn