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  • # Example questions: ➢ How does the thermal impedance (rth(j-h) and rth(c-h)) affect the device's operating junction temperature (tj), and what are the respective values provided in the datasheet?
    ➢ What is the typical holding current (ih) and latching current (il) of the thyristor, and what conditions are these values specified under?
    ➢ What is the maximum surge on-state current (itsm) the device can handle, and for how long a duration?

    • Part No.AT737
    ManufacturerPOSEICO
    Size43 Kbytes
    Pages4 pages
    DescriptionPHASE CONTROL THYRISTOR
    Datasheet Summary with AI

    ## Summary of the AT737 S 20 Thyristor/SCR Datasheet

    This document details the specifications of the AT737 S 20 thyristor (also known as an SCR - Silicon Controlled Rectifier). Here’s a consolidated overview of its key characteristics:

    Core Electrical Specifications:

    ️· Voltage: Designed for applications with a high voltage capacity.
    ️· Current:
    - Mean On-State Current (I<sub>T</sub>): 3240A (180° sin, 55°C, double-sided cooling) / 2545A (180° sin, 85°C, double-sided cooling).
    - Surge On-State Current (I<sub>TSM</sub>): 50.4 kA (10ms, without reverse voltage).
    ️· Thermal Resistance:
    - Junction to Heatsink (R<sub>th(j-h)</sub>): 11°C/kW
    - Case to Heatsink (R<sub>th(c-h)</sub>): 2°C/kW
    ️· Operating Junction Temperature (T<sub>j</sub>): -30°C to 125°C

    Key Performance Characteristics:

    ️· Switching:
    - Gate Trigger Voltage (V<sub>GT</sub>): 3.5V
    - Gate Trigger Current (I<sub>GT</sub>): 350mA
    - Critical Rate of Rise of On-State Current (di/dt): 200 A/µs (minimum)
    - Critical Rate of Rise of Off-State Voltage (dv/dt): 500 V/µs (minimum)
    ️· Gate Control: Requires a gate signal to trigger into conduction. Once triggered, it remains on until the current drops below the holding current.
    ️· Thermal Management: Requires effective heat sinking due to high power dissipation.

    Other Notable Features:

    ️· Robust Design: Suitable for demanding applications.
    ️· Standard Packaging: Uses standard cathode and gate terminal types.
    ️· Power Dissipation Charts: Provides graphs showing power dissipation versus current/waveform.

    ## Summary of the AT737 S 20 Thyristor/SCR Datasheet

    This document details the specifications of the AT737 S 20 thyristor (also known as an SCR - Silicon Controlled Rectifier). Here’s a consolidated overview of its key characteristics:

    Core Electrical Specifications:

    ️· Voltage: Designed for applications with a high voltage capacity.
    ️· Current:
    - Mean On-State Current (I<sub>T</sub>): 3240A (180° sin, 55°C, double-sided cooling) / 2545A (180° sin, 85°C, double-sided cooling).
    - Surge On-State Current (I<sub>TSM</sub>): 50.4 kA (10ms, without reverse voltage).
    ️· Thermal Resistance:
    - Junction to Heatsink (R<sub>th(j-h)</sub>): 11°C/kW
    - Case to Heatsink (R<sub>th(c-h)</sub>): 2°C/kW
    ️· Operating Junction Temperature (T<sub>j</sub>): -30°C to 125°C

    Key Performance Characteristics:

    ️· Switching:
    - Gate Trigger Voltage (V<sub>GT</sub>): 3.5V
    - Gate Trigger Current (I<sub>GT</sub>): 350mA
    - Critical Rate of Rise of On-State Current (di/dt): 200 A/µs (minimum)
    - Critical Rate of Rise of Off-State Voltage (dv/dt): 500 V/µs (minimum)
    ️· Gate Control: Requires a gate signal to trigger into conduction. Once triggered, it remains on until the current drops below the holding current.
    ️· Thermal Management: Requires effective heat sinking due to high power dissipation.

    Other Notable Features:

    ️· Robust Design: Suitable for demanding applications.
    ️· Standard Packaging: Uses standard cathode and gate terminal types.
    ️· Power Dissipation Charts: Provides graphs showing power dissipation versus current/waveform.

    Part No.AT737
    ManufacturerPOSEICO
    Size43 Kbytes
    Pages4 pages
    DescriptionPHASE CONTROL THYRISTOR
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