IXFN170N30P / Inchange Semiconductor Company Limited

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Part No.	IXFN170N30P
Manufacturer	ISC
Size	563 Kbytes
Pages	3 pages
Description	N-Channel MOSFET

Datasheet Summary with AI

# ISFM1025 / IXFN170N30P N-Channel MOSFET

## Description

️· Type: N-Channel MOSFET
️· Drain Current (ID): 138A @ 25°C
️· Drain-Source Voltage (VDSS): 300V (min)
️· Static Drain-Source On-Resistance (RDS(on)): 18Ω (max) @ VGS=10V

## Applications

️· DC-DC converters
️· Battery chargers
️· High-speed power switches

## Absolute Maximum Ratings

️· VDSS: 300V
️· VGSS: ±20V
️· ID: 138A
️· IDM: 500A
️· PD: 890W
️· TJ: 150°C
️· Tstg: -55~150°C

## Thermal Characteristics

️· Rthj-c: 0.14 °C/W

## Electrical Characteristics

️· V(BR)DSS: 300V
️· IDSS: 25uA
️· IGSS: ±200nA
️· VGS(th): 2.5 - 4.5V
️· RDS(on): ≤18 mΩ
️· VSD: ≤1.3V

## Package Dimensions (mm)

DIM min max

A 31.40 31.60

B 7.70 8.10

C 4.20 4.40

D 4.20 4.40

E 4.10 4.40

F 14.90 15.10

G 30.10 30.30

H 38.00 38.40

J 12.00 12.60

K 9.35 9.65

L 0.74 0.84

M 12.30 12.70

N 24.40 25.00

0 1.90 2.10

P 2.92 3.32

Q 26.60 27.00

R 3.80 4.20

S 4.95 5.45

T 23.70 24.30

U 0 0.10

V 3.50 5.50

W 20.15 20.45

Z 2.50 2.70

## Disclaimer

️· ISC makes no warranty and assumes no liability for product suitability or use.
️· Products are not designed for hazardous environments, aerospace, or medical applications; contact ISC for such uses.

DIM	min	max
A	31.40	31.60
B	7.70	8.10
C	4.20	4.40
D	4.20	4.40
E	4.10	4.40
F	14.90	15.10
G	30.10	30.30
H	38.00	38.40
J	12.00	12.60
K	9.35	9.65
L	0.74	0.84
M	12.30	12.70
N	24.40	25.00
0	1.90	2.10
P	2.92	3.32
Q	26.60	27.00
R	3.80	4.20
S	4.95	5.45
T	23.70	24.30
U	0	0.10
V	3.50	5.50
W	20.15	20.45
Z	2.50	2.70