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Part No.	MS2554
Manufacturer	ADPOW
Size	91 Kbytes
Pages	3 pages
Description	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

Datasheet Summary with AI

## MS2554 NPN Bipolar Transistor

Description

️· Designed for high peak pulse power applications (e.g., DME/TACAN).
️· Withstands minimum 20:1 load VSWR at any phase angle.
️· Features internal impedance matching for broadband performance.

Features

️· Frequency Range: 1025 – 1150 MHz
️· Supply Voltage: 50 Volts
️· Input/Output Matching
️· Output Power (Pout): 250 Watts
️· Gain (Gp): 6.2 dB minimum
️· Common Base Configuration

Absolute Maximum Ratings

️· Power Dissipation (Pdiss): 600 W
️· Device Current (Ic): 17.8 A
️· Collector-Supply Voltage (Vcc): 55 V
️· Junction Temperature (Tj): 200 °C
️· Storage Temperature (TSTG): -65 to +200 °C

Electrical Specifications (Static)

️· BVCBO (V): 65
️· BVEBO (V): 3.5
️· BVCER (V): 65
️· ICES (mA): 25
️· HFE: 15 – 120

Electrical Specifications (Dynamic)

️· Output Power (Pout) at 1025-1150 MHz: 250 W (Pin = 90 W, Vcc = 50 V)
️· Efficiency (ηc) at 1025-1150 MHz: 40% (Pin = 90 W, Vcc = 50 V)
️· Gain (Gp) at 1025-1150 MHz: 6.2 dB (Pin = 90 W, Vcc = 50 V)

Impedance Data

️· 1025 MHz: Zin = 4.2 + j6.7 Ω, Zcl = 2.0 - j7.5 Ω
️· 1090 MHz: Zin = 4.0 + j3.5 Ω, Zcl = 2.5 - j7.5 Ω
️· 1150 MHz: Zin = 2.3 + j2.3 Ω, Zcl = 2.5 - j8.5 Ω

Thermal Data

️· Thermal Resistance (Junction-case): 0.20 °C/W