# WSD100N06GDN56 N-Ch MOSFET

## General Description
· SGT MOSFET with high cell density.
· Designed for synchronous buck converter applications.
· RoHS and Green Product compliant.
· 100% EAS guaranteed with full function reliability.

## Features
· Lead-free and Green Devices
· 100% UIS + Rg Tested
· Reliable and Rugged
· Moisture Sensitivity Level MSL1

## Absolute Maximum Ratings
· Drain-Source Voltage (VDSS): 60V
· Gate-Source Voltage (VGS): ±20V
· Continuous Drain Current (ID1,6): 100A (TC=25°C), 65A (TC=100°C)
· Pulsed Drain Current (IDM2): 240A
· Maximum Power Dissipation (PD): 83W (TC=25°C), 50W (TC=100°C)
· Avalanche Current (IAS): 45A
· Single Pulse Avalanche Energy (EAS): 101mJ
· Maximum Junction Temperature (TJ): 150°C
· Storage Temperature Range (TSTG): -55 to 150°C

## Electrical Characteristics (Typical)
· Drain-Source Breakdown Voltage (V(BR)DSS): 60V
· Zero Gate Voltage Drain Current (IDSS): 1µA
· Gate Threshold Voltage (VGS(TH)): 1.2 - 2.5V
· Drain-Source On-State Resistance (RDS(on)): 3.0 - 3.6mΩ (VGS=10V, ID=20A)
· Total Gate Charge (Qg): 58nC
· Turn-on Delay Time (td(on)): 18ns
· Turn-off Delay Time (td(off)): 50ns

## Dynamic Characteristics
· Input Capacitance (Ciss): 3458pF
· Output Capacitance (Coss): 1522pF

## Applications
· Secondary Side Synchronous Rectification
· DC-DC Converter
· Motor Control
· Load Switching

## Important Notes
· The datasheet contains safety warnings regarding applications requiring high reliability.
· Performance is based on independent device testing, results may vary when mounted in a customer’s product.
· Specifications are subject to change without notice.