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Hello, Please ask a question about WSF80N06H Datasheet
# Example questions:
➢ What is the maximum pulse drain current (idm) for this mosfet, and under what conditions is it specified?
➢ What is the approximate junction-to-case thermal resistance (rθjc) under a pulse width of 0.01 seconds?
➢ What are the key parameters that influence the switching speed of this mosfet, and how do they affect performance?
| Part No. | WSF80N06H |
| Manufacturer | WIINSOK |
| Size | 1Mb |
| Pages | 5 pages |
| Description | Load switch. Battery protection. |
# WSF80N06H N-Ch MOSFET
## General Description
️· Advanced VD MOST technology
️· Low RDS(ON), low gate charge, fast switching
️· Designed for ruggedness, suitable for inverters
️· Applications: Load switch, battery protection, UPS
## Electrical Characteristics (TJ=25℃)
️· BVDSS (Drain-Source Breakdown Voltage): 60V (Typ. 65V)
️· RDS(ON) (Static Drain-Source On-Resistance): 8.0 mΩ (at VGS=10V, ID=30A)
️· VGS(th) (Gate Threshold Voltage): 2.9V (Typ.)
️· ID (Continuous Drain Current): 70A (TC=25°C), 36A (TC=100°C), 10.2A (TA=25°C), 9.5A (TA=70°C)
️· ISM (Pulsed Source Current): 100A
️· Qg (Total Gate Charge): 28.7 nC
️· Ciss (Input Capacitance): 3240 pF
## Absolute Maximum Ratings
️· Drain-Source Voltage (VDS): 60V
️· Gate-Source Voltage (VGS): ±20V
️· Total Power Dissipation (PD): 52W (TC=25℃), 2W (TA=25℃)
️· Storage/Operating Temperature Range (TSTG/TJ): -55 to 150℃
## Key Features
️· High cell density Trench technology
️· Green Device Available
️· Excellent Cdv/dt effect decline
️· Super Low Gate Charge
## Notes
️· Data tested on 1 inch², 2oz FR-4 board.
️· Pulsed measurements: pulse width ≤ 300us, duty cycle ≤ 2%.
️· Power dissipation limited by junction temperature (150℃).
# WSF80N06H N-Ch MOSFET
## General Description
️· Advanced VD MOST technology
️· Low RDS(ON), low gate charge, fast switching
️· Designed for ruggedness, suitable for inverters
️· Applications: Load switch, battery protection, UPS
## Electrical Characteristics (TJ=25℃)
️· BVDSS (Drain-Source Breakdown Voltage): 60V (Typ. 65V)
️· RDS(ON) (Static Drain-Source On-Resistance): 8.0 mΩ (at VGS=10V, ID=30A)
️· VGS(th) (Gate Threshold Voltage): 2.9V (Typ.)
️· ID (Continuous Drain Current): 70A (TC=25°C), 36A (TC=100°C), 10.2A (TA=25°C), 9.5A (TA=70°C)
️· ISM (Pulsed Source Current): 100A
️· Qg (Total Gate Charge): 28.7 nC
️· Ciss (Input Capacitance): 3240 pF
## Absolute Maximum Ratings
️· Drain-Source Voltage (VDS): 60V
️· Gate-Source Voltage (VGS): ±20V
️· Total Power Dissipation (PD): 52W (TC=25℃), 2W (TA=25℃)
️· Storage/Operating Temperature Range (TSTG/TJ): -55 to 150℃
## Key Features
️· High cell density Trench technology
️· Green Device Available
️· Excellent Cdv/dt effect decline
️· Super Low Gate Charge
## Notes
️· Data tested on 1 inch², 2oz FR-4 board.
️· Pulsed measurements: pulse width ≤ 300us, duty cycle ≤ 2%.
️· Power dissipation limited by junction temperature (150℃).
| Part No. | WSF80N06H |
| Manufacturer | WIINSOK |
| Size | 1Mb |
| Pages | 5 pages |
| Description | Load switch. Battery protection. |
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