# isc Silicon NPN Power Transistor 3DD101C

## Description
· TO-3 packaging
· Large collector current
· Low collector saturation voltage
· High power dissipation
· Minimum lot-to-lot variations for robust device performance

## Applications
· DC-DC converter
· Solenoid or motor driver

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	250	V
VCEO	Collector-Emitter Voltage	200	V
VEBO	Emitter-Base Voltage	4	V
IC	Collector Current-Continuous	5	A
PD	Total Power Dissipation @ TC=75℃	50	W
TJ	Max. Junction Temperature	175	℃
Tstg	Storage Temperature	-55~175	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	2.0	℃/W

## Electrical Characteristics (TC=25℃)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
BVCEO	Collector-Emitter Sustaining Voltage	IC=5mA; IB=0	200		V
BVCBO	Collector-Base Sustaining Voltage	IC=5mA; IE=0	250		V
BVEBO	Emitter-Base Sustaining Voltage	IE=5mA; IC=0	4		V
VCE(sat)	Collector-Emitter Saturation Voltage	IC=2.5A; IB=0.25A		1.5	V
ICEO	Collector Cutoff Current	VCE=50V; IB=0		1.0	mA
ICBO	Collector Cutoff Current	VCB=50V; IE=0		2.0	mA
hFE	DC Current Gain	IC=2A; VCE=5V	20

## Website
· www.iscsemi.com
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