Fabricant | No de pièce | Fiches technique | Description |
California Eastern Labs |
NX6307
|
401Kb/5P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
|
Renesas Technology Corp |
NX6307
|
325Kb/11P |
LASER DIODE
2004 |
California Eastern Labs |
NX6307GH
|
401Kb/5P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
|
Renesas Technology Corp |
NX6307GH
|
325Kb/11P |
LASER DIODE
2004 |
California Eastern Labs |
NX6307GK
|
401Kb/5P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
|
Renesas Technology Corp |
NX6307GK
|
325Kb/11P |
LASER DIODE
2004 |
NX6307SH
|
325Kb/11P |
LASER DIODE
2004 |
NX6307SK
|
325Kb/11P |
LASER DIODE
2004 |
NX6308GH
|
221Kb/9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
California Eastern Labs |
NX6308GH
|
191Kb/7P |
1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
NX6308GH-AZ
|
191Kb/7P |
1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
Renesas Technology Corp |
NX6308GH
|
221Kb/9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
NX6309GH
|
221Kb/9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
California Eastern Labs |
NX6309GH
|
191Kb/7P |
1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
NX6309GH-AZ
|
191Kb/7P |
1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
Renesas Technology Corp |
NX6309GH
|
221Kb/9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|