Fabricant | No de pièce | Fiches technique | Description |
Quanzhou Jinmei Electro... |
2SC4706
|
195Kb/4P |
Silicon NPN Power Transistors
|
2SC4706_2015
|
195Kb/4P |
Silicon NPN Power Transistors
|
Hitachi Semiconductor |
2SC4702
|
31Kb/6P |
Silicon NPN Epitaxial
|
Renesas Technology Corp |
2SC4702
|
72Kb/6P |
Silicon NPN Epitaxial
|
Guangdong Kexin Industr... |
2SC4702
|
35Kb/1P |
Silicon NPN Epitaxial
|
Renesas Technology Corp |
2SC4702
|
106Kb/7P |
Silicon NPN Epitaxial
|
2SC4702XV-TR-E
|
106Kb/7P |
Silicon NPN Epitaxial
|
2SC4702XV-TR-E
|
72Kb/6P |
Silicon NPN Epitaxial
|
2SC4702XV-TR-H
|
106Kb/7P |
Silicon NPN Epitaxial
|
2SC4702
|
106Kb/7P |
Silicon NPN Epitaxial
|
2SC4702
|
150Kb/7P |
Silicon NPN Epitaxial
|
Inchange Semiconductor ... |
2SC4703
|
269Kb/2P |
isc Silicon NPN RF Transistor
|
California Eastern Labs |
2SC4703
|
163Kb/7P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
NEC |
2SC4703
|
66Kb/8P |
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Renesas Technology Corp |
2SC4703
|
181Kb/9P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
|
2SC4703-A
|
137Kb/2P |
RF & Microwave device
|
2SC4703-T1
|
181Kb/9P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
|
California Eastern Labs |
2SC4703-T1
|
163Kb/7P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
Renesas Technology Corp |
2SC4703
|
181Kb/9P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
Guangdong Kexin Industr... |
2SC4705
|
51Kb/2P |
NPN Epitaxial Planar Silicon Transistor
|