Fabricant | No de pièce | Fiches technique | Description |
Central Semiconductor C... |
CP191-2N2222A-CT
|
465Kb/9P |
P-Channel JFET Die
R1 17-January 2018 |
CP191-2N2222A-CT
|
530Kb/9P |
PNP - High Voltage Transistor Die
R0 8-August 2019 |
CP191-2N2222A-WN
|
465Kb/9P |
P-Channel JFET Die
R1 17-January 2018 |
CP191-2N2222A-WN
|
530Kb/9P |
PNP - High Voltage Transistor Die
R0 8-August 2019 |
CP191-2N2222A-WR
|
465Kb/9P |
P-Channel JFET Die
R1 17-January 2018 |
CP191-2N2222A-WR
|
530Kb/9P |
PNP - High Voltage Transistor Die
R0 8-August 2019 |
CP191-2N2222A-WS
|
465Kb/9P |
P-Channel JFET Die
R1 17-January 2018 |
CP191-2N2222A-WS
|
530Kb/9P |
PNP - High Voltage Transistor Die
R0 8-August 2019 |
CP191V-2N2222A-CT
|
465Kb/9P |
P-Channel JFET Die
R1 17-January 2018 |
CP191V-2N2222A-CT
|
530Kb/9P |
PNP - High Voltage Transistor Die
R0 8-August 2019 |
CP191V-2N2222A-WN
|
465Kb/9P |
P-Channel JFET Die
R1 17-January 2018 |
CP191V-2N2222A-WN
|
530Kb/9P |
PNP - High Voltage Transistor Die
R0 8-August 2019 |
CP191V-2N2222A-WR
|
530Kb/9P |
PNP - High Voltage Transistor Die
R0 8-August 2019 |
CP191V-2N2222A-WR
|
465Kb/9P |
P-Channel JFET Die
R1 17-January 2018 |
Microsemi Corporation |
JANS2N2222AUB
|
142Kb/6P |
ELECTRICAL CHARACTERISTICS (TA = +25째C, unless otherwise noted)
|
JANTX2N2222AUB
|
58Kb/2P |
NPN SILICON SWITCHING TRANSISTOR
120101 |
JANTX2N2222AUB
|
142Kb/6P |
TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR
|
MSR2N2222AUB
|
781Kb/7P |
Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900
Rev. 1 |
ON Semiconductor |
P2N2222AG
|
165Kb/6P |
Amplifier Transistors(NPN Silicon)
April, 2007 -- Rev. 5 |
P2N2222ARL1G
|
165Kb/6P |
Amplifier Transistors(NPN Silicon)
April, 2007 -- Rev. 5 |