G4BPI35-SD-R Fiches technique, PDF

Index	G4BPI35-SD-R(1) Résultats de recherche (s) pour.
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terminant par	*2G4BPI35-SD-R(1)
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Fabricant

Fabricant	No de pièce	Fiches technique	Description
Silicom Ltd.	M1E2G4BPI35-SD-R	493Kb/7P	Quad Port Copper Gigabit Ethernet Express Module Bypass Server Adapter
Search Partnumber : Start with "G4BPI35-SD-R" - Total : 16 ( 1/1 Page)
Omron Electronics LLC	G4B-112T-C-US	137Kb/5P	General Purpose Relay
	G4B-112T-US	137Kb/5P	General Purpose Relay
	G4B-112T1-C-US	137Kb/5P	General Purpose Relay
	G4B-112T1-FD-C-US-RP	137Kb/5P	General Purpose Relay
	G4B-112T1-FD-US-RP	137Kb/5P	General Purpose Relay
	G4B-112T1-FD-US-RPAC24	237Kb/5P	General Purpose Relay
	G4B-112T1-US	137Kb/5P	General Purpose Relay
	G4B-112TP-C-US	137Kb/5P	General Purpose Relay
	G4B-112TP-FD-C-US-RP	137Kb/5P	General Purpose Relay
	G4B-112TP-FD-US-RP	137Kb/5P	General Purpose Relay
	G4B-112TP-US	137Kb/5P	General Purpose Relay
International Rectifier	G4BC30KD	196Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
	G4BC30UD	234Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	G4BC30W	139Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
	G4BC30W	275Kb/9P	INSULATED GATE BIPOLAR TRANSISTOR
	G4BC30W	287Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR
	G4BC40S	157Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
	G4BC40U	169Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)

G4BPI35-SD-R revendeur

revendeur	No de pièce	Fabricant	Description	Price	Qty. BuyNow

G4BPI35-SD-R Fiches technique, PDF

G4BPI35-SD-R revendeur

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