Fabricant | No de pièce | Fiches technique | Description |
NEC |
2SJ355
|
67Kb/6P
|
P-CHANNEL MOS FET FOR HIGH SWITCHING
|
VBsemi Electronics Co.,... |
2SJ355
|
985Kb/8P
|
P-Channel 30-V (D-S) MOSFET
|
Renesas Technology Corp |
2SJ355
|
268Kb/8P
|
MOS FIELD EFFECT TRANSISTOR
1996
|
Search Partnumber :
Start with "2SJ355" -
Total : 28 ( 1/2 Page) |
Hitachi Semiconductor |
2SJ350
|
47Kb/9P |
Silicon P-Channel MOS FET
|
Renesas Technology Corp |
2SJ350
|
82Kb/7P |
Silicon P Channel MOS FET
|
VBsemi Electronics Co.,... |
2SJ350
|
1Mb/7P |
P-Channel 100 V (D-S) MOSFET
|
Renesas Technology Corp |
2SJ350-E
|
82Kb/7P |
Silicon P Channel MOS FET
|
Guangdong Kexin Industr... |
2SJ3501
|
523Kb/4P |
P-Channel MOSFET
|
Hitachi Semiconductor |
2SJ351
|
40Kb/8P |
Silicon P-Channel MOS FET
|
Renesas Technology Corp |
2SJ351
|
70Kb/6P |
Silicon P Channel MOS FET
|
2SJ351-E
|
70Kb/6P |
Silicon P Channel MOS FET
|
2SJ351
|
89Kb/8P |
Silicon P Channel MOS FET
|
Hitachi Semiconductor |
2SJ352
|
40Kb/8P |
Silicon P-Channel MOS FET
|
Renesas Technology Corp |
2SJ352
|
70Kb/6P |
Silicon P Channel MOS FET
|
2SJ352-E
|
70Kb/6P |
Silicon P Channel MOS FET
|
NEC |
2SJ353
|
58Kb/6P |
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
|
Renesas Technology Corp |
2SJ353
|
204Kb/8P |
MOS FIELD EFFECT TRANSISTOR
1996 |
2SJ356
|
269Kb/8P |
MOS FIELD EFFECT TRANSISTOR
1996 |
VBsemi Electronics Co.,... |
2SJ356
|
959Kb/7P |
P-Channel 60-V (D-S) MOSFET
|
Guangdong Kexin Industr... |
2SJ356
|
49Kb/2P |
MOS Field Effect Transistors
|