2N3906 datasheet(2/5 Pages) JIANGSU

No de pièce	2N3906

Description	TO-92 Plastic-Encapsulate Transistors

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Fabricant	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Site Internet	http://www.cj-elec.com/en/

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Parameter

Symbol

Test

conditions

MLQ

T\S

MD[

UQLW

Collector-base breakdown voltage

V(BR)CBO

IC = -10 A, IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC =-1mA , IB=0

-40

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -10A, IC=0

-5

V

Collector cut-off

current

ICBO

VCB= -40 V,IE=0

-0.1

A

Collector cut-off

current

ICEX

VCE= -30 V,VBE(off)=-3V

-50

nA

Emitter cut-off

current

IEBO

VEB= -5 V ,

IC=0

-0.1

A

hFE1

VCE=-1 V,

IC= -10mA

100

400

hFE2

VCE=-1 V,

IC= -50mA

60

DC current gain

hFE3

VCE=-1 V,

IC= -100mA

30

Collector-emitter saturation voltage

VCE(sat)

IC= -50mA, IB= -5mA

-0.4

V

Base-emitter saturation voltage

VBE(sat)

IC= -50mA, IB= -5mA

-0.95

V

Transition frequency

fT

VCE=-20V, IC= -10mA

f = 100MHz

250

MHz

Delay Time

td

35

ns

Rise Time

tr

VCC=-3V,VBE=-0.5V,

IC=-10mA,IB1=-1mA

35

ns

Storage Time

ts

225

ns

Fall Time

tf

VCC=-3V,Ic=-10mA

IB1=IB2=-1mA

75

ns

CLASSIFICATION OF hFE1

Rank

2

<

*

Range

100-200

200-300

300-400

www

.cj-elec.com

(-XQ

(/(&75,&$/&+$5$&7(5,67,&6

a

T =25

unless otherwise specified

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