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LM324-N-MIL Fiches technique(PDF) 4 Page - Texas Instruments

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No de pièce LM324-N-MIL
Description  Low-Power, Quad-Operational Amplifier
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

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LM324-N-MIL
SNOSD66 – JUNE 2017
www.ti.com
Product Folder Links: LM324-N-MIL
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
(1)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(2)
This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of
the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is
also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to
the V+voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and
normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than
−0.3 V (at 25°C).
(3)
For operating at high temperatures, the LM324-N-MIL must be derated based on a 125°C maximum junction temperature and a thermal
resistance of 88°C/W which applies for the device soldered in a printed circuit board, operating in a still air ambient. The dissipation is
the total of all four amplifiers—use external resistors, where possible, to allow the amplifier to saturate of to reduce the power which is
dissipated in the integrated circuit.
(4)
Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground,
the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of 15 V,
continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result
from simultaneous shorts on all amplifiers.
6 Specifications
6.1 Absolute Maximum Ratings
See
(1).
MIN
MAX
UNIT
Supply Voltage, V+
32
V
Differential Input Voltage
32
V
Input Voltage
−0.3
32
V
Input Current (VIN < −0.3 V)
(2)
50
mA
Power Dissipation(3)
PDIP
1130
mW
CDIP
1260
mW
SOIC Package
800
mW
Output Short-Circuit to GND (One
Amplifier)(4)
V+
≤ 15 V and TA = 25°C
Continuous
Soldering Information
Dual-In-Line
Package
Soldering (10 seconds)
260
°C
Small Outline
Package
Vapor Phase (60 seconds)
215
°C
Infrared (15 seconds)
220
°C
Storage temperature, Tstg
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±250
V
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
Supply Voltage (V+ - V-)
3
32
V
Operating Input Voltage on Input pins
0
V+
V
Operating junction temperature, TJ
0
70
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
LM324-N-MIL
UNIT
D/SOIC
14 PINS
RθJA
Junction-to-ambient thermal resistance
88
°C/W


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