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LM324-N-MIL Fiches technique(PDF) 4 Page - Texas Instruments |
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LM324-N-MIL Fiches technique(HTML) 4 Page - Texas Instruments |
4 / 29 page ![]() 4 LM324-N-MIL SNOSD66 – JUNE 2017 www.ti.com Product Folder Links: LM324-N-MIL Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. (2) This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than −0.3 V (at 25°C). (3) For operating at high temperatures, the LM324-N-MIL must be derated based on a 125°C maximum junction temperature and a thermal resistance of 88°C/W which applies for the device soldered in a printed circuit board, operating in a still air ambient. The dissipation is the total of all four amplifiers—use external resistors, where possible, to allow the amplifier to saturate of to reduce the power which is dissipated in the integrated circuit. (4) Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of 15 V, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers. 6 Specifications 6.1 Absolute Maximum Ratings See (1). MIN MAX UNIT Supply Voltage, V+ 32 V Differential Input Voltage 32 V Input Voltage −0.3 32 V Input Current (VIN < −0.3 V) (2) 50 mA Power Dissipation(3) PDIP 1130 mW CDIP 1260 mW SOIC Package 800 mW Output Short-Circuit to GND (One Amplifier)(4) V+ ≤ 15 V and TA = 25°C Continuous Soldering Information Dual-In-Line Package Soldering (10 seconds) 260 °C Small Outline Package Vapor Phase (60 seconds) 215 °C Infrared (15 seconds) 220 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±250 V 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Supply Voltage (V+ - V-) 3 32 V Operating Input Voltage on Input pins 0 V+ V Operating junction temperature, TJ 0 70 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) LM324-N-MIL UNIT D/SOIC 14 PINS RθJA Junction-to-ambient thermal resistance 88 °C/W |
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