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ST72325AR7-Auto Fiches technique(PDF) 202 Page - STMicroelectronics

No de pièce ST72325AR7-Auto
Description  SCI asynchronous serial interface
PDF  243 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST72325AR7-Auto Fiches technique(HTML) 202 Page - STMicroelectronics

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ST72325xxx-Auto
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Doc ID 13770 Rev 3
19.6.2
Flash memory
Warning:
Do not connect 12V to VPP before VDD is powered on, as this
may damage the device.
Table 123.
Dual voltage HDFlash memory
Symbol
Parameter
Conditions
Min(1)
1.
Data based on characterization results, not tested in production
Typ
Max(1)
Unit
fCPU
Operating frequency
Read mode
0
8
MHz
Write / Erase mode
1
8
VPP
Programming voltage(2)
2.
VPP must be applied only during the programming or erasing operation and not permanently for reliability
reasons.
4.5V < VDD < 5.5V
11.4
12.6
V
IDD
Supply current(3)
3.
Data based on simulation results, not tested in production
Run mode (fCPU = 4 MHz)
3
mA
Write / Erase
0
Power down mode / HALT
1
10
µA
IPP
VPP current
(3)
Read (VPP = 12V)
200
Write / Erase
30
mA
tVPP
Internal VPP stabilization
time
10
µs
tRET
Data retention
TA =55°C
20
years
NRW
Write erase cycles
TA = 85°C
100
cycles
TPROG
TERASE
Programming or erasing
temperature range
-40
25
85
°C



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