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ST7LITE49K2 Fiches technique(PDF) 211 Page - STMicroelectronics |
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ST7LITE49K2 Fiches technique(HTML) 211 Page - STMicroelectronics |
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211 / 245 page ![]() ST7LITE49K2 Electrical characteristics 211/245 13.7 Memory characteristics TA = -40 °C to 125 °C, unless otherwise specified. Table 89. RAM and hardware registers characteristics Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode(1) 1. Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware registers (only in Halt mode). Guaranteed by construction, not tested in production. Halt mode (or Reset) 1.6 V Table 90. Flash program memory characteristics Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for Flash write/erase Refer to operating range of VDD with TA, Section 13.3.1 on page 195 2.4 5.5 V tprog Programming time for 1~32 bytes(1) 1. Up to 32 bytes can be programmed at a time. TA=−40 to +125 °C 5 10 ms Programming time for 4 kbytes TA=+25 °C 0.64 1.28 s tRET Data retention(2) 2. Data based on reliability test results and monitored in production. TA=+55 °C (3) 3. The data retention time increases when the TA decreases. 20 years NRW Write erase cycles TA=+25 °C 10k cycles IDD Supply current(4) 4. Guaranteed by Design. Not tested in production. Read / Write / Erase modes fCPU = 8 MHz, VDD = 5.5 V 2.6 mA No Read/No Write mode 100 μA Power down mode / Halt 00.1 μA Table 91. Data EEPROM memory characteristics Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for EEPROM Write/Erase Refer to operating range of VDD with TA, Section 13.3.1 on page 195 2.4 5.5 V tprog Programming time for 1~32 bytes TA=−40 to +125 °C 5 10 ms tret Data retention(1) 1. Data based on reliability test results and monitored in production. TA=+55 °C (2) 2. The data retention time increases when the TA decreases. 20 years NRW Write erase cycles TA=+25 °C 300K cycles |
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