MBR7545 datasheet(1/3 Pages) GENESIC

No de pièce	MBR7545

Description	Not ESD Sensitive

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Fabricant	GENESIC [GeneSiC Semiconductor, Inc.]

Site Internet	http://www.genesicsemi.com/

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VRRM = 45 V - 100 V

IF(AV) = 75 A

Features

• High Surge Capability

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

MBR7545(R) MBR7560(R)

Unit

Repetitive peak reverse voltag

VRRM

45

60

V

RMS reverse voltage

VRMS

32

42

V

DC blocking voltage

VDC

45

60

V

• Types from 45 V to 100 V VRRM

Conditions

100

70

100

80

MBR7545 thru MBR75100R

MBR75100(R)

80

50

MBR7580(R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Silicon Power

Schottky Diode

2. Reverse polarity (R): Stud is anode.

DC blocking voltage

VDC

45

60

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBR7545(R) MBR7560(R)

Unit

Average forward current (per

pkg)

IF(AV)

75

A

Maximum forward voltage

(per leg)

0.75

0.78

11

10

20

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.6

°C/W

Inch ponds

(in-pb)

Mounting torque

30

TC = 125 °C

75

Peak forward surge current

(per leg)

IFSM

tp = 8.3 ms, half sine

1000

A

Tj = 100 °C

10

-55 to 150

100

80

-55 to 150

MBR75100(R)

11

MBR7580(R)

0.6

Tj = 150 °C

0.6

0.84

20

mA

V

Tj = 25 °C

IFM = 75 A, Tj = 25 °C

Conditions

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

IR

VF

20

-55 to 150

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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