EMX18 datasheet(1/3 Pages) JIANGSU

No de pièce	EMX18

Description	DUAL TRANSISTOR(NPNNPN)

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Fabricant	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Site Internet	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-563 Plastic-Encapsulate Transistors

EMX18

FEATURES

Two 2SC5585 chips in a package

Mounting possible with SOT-563 automatic mounting machines

1

Transistor elements are independent, eliminating interference

Mounting cost and area be cut in half

Marking: X18

Equivalent circuit

Absolute maximum ratings (Ta=25

℃)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

15

V

VCEO

Collector-Emitter Voltage

12

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current

500

mA

PC

Collector Power Dissipation

150

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=10μA, IE=0

15

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

12

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA, IC=0

6

V

Collector cut-off current

ICBO

VCB=15V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=6V, IC=0

0.1

μA

DC current gain

hFE

VCE=2V, IC=10mA

270

680

Collector-emitter saturation voltage

VCE(sat)

IC=200mA, IB=10mA

0.25

V

Transition frequency

fT

VCE=2V, IE=-10mA, f=100MHz

320

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

7.5

pF

JC T

SOT-563

DUAL TRANSISTOR(NPN+NPN)

www.cj-elec.com

1

A,JuSn,2014

www.cj-elec.com

C,Sep,2016

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