MBR60030CTL datasheet(1/3 Pages) GENESIC

No de pièce	MBR60030CTL

Description	Not ESD Sensitive

Download	3 Pages

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Fabricant	GENESIC [GeneSiC Semiconductor, Inc.]

Site Internet	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 30 V

IF(AV) = 600 A

Features

• High Surge Capability

Twin Tower Package

• Type 30 V VRRM

• Not ESD Sensitive

Parameter

MBR60030CT(R)L Unit

30

V

21

V

30

V

Conditions

Symbol

VRRM

VRMS

V

Maximum recurrent peak reverse voltage

Maximum RMS voltage

M i

DC bl ki

lt

Low VF Silicon Power

Schottky Diode

MBR60030CT(R)L

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

30

V

-55 to 150

°C

-55 to 150

°C

Parameter

MBR60030CT(R)L Unit

600

A

4000

A

0.58

3

250

Thermal characteristics

Maximum thermal resistance,

junction - case

(per leg)

0.28

°C/W

Maximum instantaneous forward voltage (per

leg)

Maximum instantaneous reverse

current at rated DC blocking voltage

(per leg)

IR

Tj = 100 °C

tp = 8.3 ms, half sine

IFSM

Peak forward surge current

(per leg)

IFM = 300 A, Tj = 25 °C

Tj = 25 °C

VF

Storage temperature

TC = 100 °C

VDC

Tj

Average forward current (per pkg)

IF(AV)

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

Tstg

Symbol

Maximum DC blocking voltage

mA

V

R

ΘJC

Operating temperature

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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