BC847BV datasheet(1/3 Pages) JIANGSU

No de pièce	BC847BV

Description	DUAL TRANSISTOR(NPN NPN)

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Fabricant	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Site Internet	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-563 Plastic-Encapsulate Transistors

BC847BV DUAL TRANSISTOR(NPN+NPN)

FEATURES

Epitaxial Die Construction

Complementary PNP Type Available

(BC857BV)

Ultra-Small Surface Mount Package

Marking: K4V

MAXIMUM RATINGS(

Ta=25 unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

0.1

A

PC

Collector Power Dissipation

0.15

W

RθJA

Thermal Resistance. Junction to Ambient Air

833

℃/W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55 to +150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=10μA,IE=0

50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB=0

45

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1μA,IC=0

6

V

Collector cut-off current

ICBO

VCB=30V,IE=0

15

nA

Emitter cut-off current

IEBO

VEB=5V,IC=0

100

nA

DC current gain

hFE(1)

VCE=5V,IC=2mA

200

450

Collector-emitter saturation voltage

VCE(sat)

IC=10mA,IB=0.5mA

IC=100mA,IB=5mA

100

300

mV

Base-emitter saturation voltage

VBE(sat)

IC=10mA,IB=0.5mA

IC=100mA,IB=5mA

700

900

mV

Base-emitter voltage

VBE

VCE=5V,IC=2mA

VCE=5V,IC=10mA

580

660

700

770

mV

Transition frequency

fT

VCE=5V,IC=10mA,f=100MHz

100

MHz

Output capacitance

Cob

VCB=10V,IE=0,f=1MHz

4.5

pF

Noise Figure

NF

VCE=5V,Rs=2

KΩ,

f=1kHz,BW=200Hz

10

dB

SOT-563

℃

JC T

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

C,May,2015

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