BF256B datasheet(1/3 Pages) FAIRCHILD

No de pièce	BF256B

Description	N-Channel RF Amplifiers

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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Rev. A, June 2003

Absolute Maximum Ratings T

a=25°C unless otherwise noted

Electrical Characteristics T

a=25°C unless otherwise noted

Symbol

Parameter

Value

Units

VDG

Drain-Gate Voltage

30

V

VGS

Gate-Source Voltage

-30

V

IGF

Forward Gate Current

10

mA

PD

Total Device Dissipation @TA=25°C

Derate above 25

°C

350

2.8

mW

mW/

°C

TSTG

Operating and storage Temperature Range

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

V(BR)GSS

Gate-Source Breakdown Voltage

VDS = 0, IG = 1µA-30

V

VGS

Gate-Source

VDS = 15V, ID = 200µA

-0.5

-7.5

V

VGS(off)

Gate-Source Cutoff Voltage

VDS = 15V, ID = 10nA

-0.5

-8

V

IGSS

Gate Reverse Current

VGS = -20V, VGS = 0

-5

nA

On Characteristics

IDSS

Zero-Gate Voltage Drain Current

BF256A

BF256B

BF256C

VGS = 15V, VGS = 0

3

6

11

7

13

18

mA

Small Signal Characteristics

gfs

Common Source Forward Transconductance

VDS = 15V, VGS = 0, f = 1KHz

4.5

mmhos

BF256A/BF256B/BF256C

N-Channel RF Amplifiers

• This device is designed for VHF/UHF amplifiers.

• Sourced from process 50.

TO-92

1. Gate 2. Source 3. Drain

1

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