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MUR8100E Fiches technique(PDF) 2 Page - ON Semiconductor |
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MUR8100E Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 6 page MUR8100E, MUR880E http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR880E MUR8100E VRRM VRWM VR 800 1000 V Average Rectified Forward Current (Rated VR, TC = 150°C) Total Device IF(AV) 8.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFM 16 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) (iF = 8.0 A, TC = 150°C) (iF = 8.0 A, TC = 25°C) vF 1.5 1.8 V Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TC = 100°C) (Rated DC Voltage, TC = 25°C) iR 500 25 mA Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A) trr 100 75 ns Controlled Avalanche Energy (See Test Circuit in Figure 6) WAVAL 20 mJ 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
Numéro de pièce similaire - MUR8100E |
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Description similaire - MUR8100E |
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