STK7002 datasheet(2/4 Pages) AUK

No de pièce	STK7002

Description	N-Channel Enhancement-Mode MOSFET

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Fabricant	AUK [AUK corp]

Site Internet	https:www.auk.co.kr

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KST-2105-003

2

STK7002

Absolute maximum ratings

(Ta=25

°C)

Characteristic

Symbol

Ratings

Unit

Drain-Source voltage

V

DSS

60

V

Gate-Source voltage

V

GS

±20

V

Maximum Drain current

I

D

115

mA

Pulsed Drain Current

I

DM

800

mA

Power dissipation

P

D

200

mW

Maximum Junction-to-Ambient

R

thJA

625

°C/W

Operating Junction and

Storage temperature range

T

J , T stg

-55~150

°C

Electrical Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drian-Source breakdown voltage

BV

DSS

I

D=10µA, VGS =0

60

-

V

Gate-Threshold voltage

V

GS(th)

I

D=0.25mA, VDS =V GS

1

2.0

2.5

V

Zero Gate voltage drain current

I

DSS

V

DS =60V, VGS =0

-

1

µA

Gate-body leakage

I

GSS

V

DS =0V, VGS =±20V

-

±100

nA

On-state drain current

I

D(on)

V

DS =7.5V, VGS =10V

500

1000

-

mA

V

GS =5V, ID=0.05A

-

3.2

7.5

Tc=125℃

5.8

13.5

V

GS =10V, ID=0.5A

-

2.4

7.5

Drain-Source on-resistance

R

DS(ON)

Tc=125℃

4.4

13.5

Ω

Forward transconductance

g

fs

V

DS =10V, ID=0.2A

80

-

mS

Input capacitance

C

iss

-

22

50

Output capacitance

C

oss

-

11

25

Reverse Transfer capacitance

C

rss

V

DS =25V, VGS =0, f=1MHz

-

2

5

pF

Turn-on time

t

ON

-

7

20

ns

Turn-off time

t

OFF

V

DD=30V, ID=0.2A

V

GEN =10V, RG=25Ω

-

11

20

ns

Numéro de pièce similaire - STK7002

Fabricant	No de pièce	Fiches technique	Description
KODENSHI_AUK CORP.	STK7002	306Kb / 6P	HIGH SPEED SWITCHING APPLICATIONS
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KODENSHI_AUK CORP.	STK7002U	406Kb / 8P	N-Channel Enhancement-Mode MOSFET

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