D13007 datasheet(2/5 Pages) AUK

No de pièce	D13007

Description	NPN Silicon Power Transistor

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Fabricant	AUK [AUK corp]

Site Internet	https:www.auk.co.kr

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KST-H035-000

2

STD13007F

Absolute maximum ratings

(Ta=25

°C)

Characteristic

Symbol

Rating

Unit

Collector-Base voltage

VCBO

700

V

Collector-Emitter voltage

VCEO

400

V

Emitter-base voltage

VEBO

9

V

Collector current (DC)

IC

8

A

Collector current (Pulse)

ICM

16

A

Base current (DC)

IB

4

A

Collector Power dissipation (Tc=25℃)

PC

40

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-55~150

°C

Electrical Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min. Typ. Max.

Unit

Collector-Emitter sustaining voltage

BVCEO(sus) IC=10mA, IB=0

400

-

V

Emitter cut-off current

IEBO

VEB=9V, IC=0

-

1

mA

IC=2A, VCE=5V

8

-

60

DC Current gain

hFE*

IC=5A, VCE=5V

5

-

30

IC=2A, IB=0.4A

-

1

IC=5A, IB=1A

-

2

Collector-Emitter saturation voltage

VCE(sat)*

IC=8A, IB=2A

-

3

V

IC=2A, IB=0.4A

-

1.2

Base-Emitter saturation voltage

VBE(sat)*

IC=5A, IB=1A

-

1.6

V

Transition frequency

fT

VCE=10V, IC=0.5A, f=1MHz

-

14

-

MHz

Output capacitance

Cob

VCB=10V, IE=0, f=0.1MHz

-

80

-

㎊

Turn on Time

ton

-

1.6

Storage Time

tstg

-

3

Fall Time

tf

VCC=125V, IC=5A

IB1=-IB2=1A

-

0.7

㎲

* Pulse test: PW≤300 ㎲, Duty cycle≤2%.

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