2N3720 datasheet(2/3 Pages) MICROSEMI

No de pièce	2N3720

Description	Silicon PNP Power Transistors

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Fabricant	MICROSEMI [Microsemi Corporation]

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MSC1027.PDF 02-24-99

2N3720

ELECTRICAL CHARACTERISTICS:

(25

°°Case Temperature Unless Otherwise Noted)

VALUE

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Min.

Max.

Units

VCEO(sus)*

Collector-Emitter

Sustaining Voltage

IC = 20 mAdc, IB = 0 (Note 1)

60

----

Vdc

ICEX*

Collector Cutoff Current

VCE = 60 Vdc, VBE(off) = 2.0 Vdc

VCE = 60 Vdc, VBE(off) = 2.0 Vdc, TC = 150°°C

----

10

1.0

µAdc

mAdc

ICBO*

Collector Cutoff Current

VCB = 60 Vdc, IE = 0

----

10

µAdc

IEBO*

Emitter Cutoff Current

VBE = 4.0 Vdc, IC = 0

----

1.0

mAdc

hFE

*

DC Current Gain

(Note 1)

IC = 500 mAdc, VCE = 1.5 Vdc

IC = 1.0 Adc, VCE = 1.5 Vdc

IC = 1.0 Adc, VCE = 1.5 Vdc, TC = - 40°°C

20

25

15

----

180

----

VCE(sat)*

Collector-Emitter

Saturation Voltage

(Note 1)

IC = 1.0 Adc, IB = 100 mAdc, TC = - 40°°C to + 100°°C

IC = 3.0 Adc, IB = 300 mAdc, TC = - 40°°C to + 100°°C

----

0.75

1.5

Vdc

VBE(sat)*

Base-Emitter Saturation

Voltage

(Note 1)

IC = 1.0 Adc, IB = 100 mAdc, TC = - 40°°C to + 100°°C

IC = 3.0 Adc, IB = 300 mAdc, TC = - 40°°C to + 100°°C

----

1.5

2.3

Vdc

fT*

Current-Gain Bandwidth

Product

(Note 2)

IC = 500 mAdc, VCE = 10 Vdc, ftest = 30 MHz

60

----

MHz

Cob*

Output Capacitance

VCB = 10 Vdc, IE = 0, f = 0.1 MHz

----

120

pF

Cib*

Input Capacitance

VEB = 0.5 Vdc, IC = 0, f = 0.1 MHz

----

1000

pF

ton*

Turn-on Time

VCC = 12 Vdc, VBE(off) = 0, IC = 1.0 Adc, IB1 = 0.1 Adc

----

100

ns

toff*

Turn-off Time

VCC = 12 Vdc, IC = 1.0 Adc, IB1 = IB2 = 100 mAdc

----

400

ns

Note 1: Pulse Test: Pulse width

≤≤ 300µµS, Duty Cycle = 2.0%.

Note 2: fT = | hfe | * ftest

* Indicates JEDEC registered data

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