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JANTX2N6847 Fiches technique(PDF) 1 Page - International Rectifier |
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JANTX2N6847 Fiches technique(HTML) 1 Page - International Rectifier |
1 / 7 page Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 25°C Continuous Drain Current -2.5 ID @ VGS = -10V, TC = 100°C Continuous Drain Current -1.6 IDM Pulsed Drain Current ➀ -10 PD @ TC = 25°C Max. Power Dissipation 2 0 W Linear Derating Factor 0.16 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 180 mJ IAR Avalanche Current ➀ —A EAR Repetitive Avalanche Energy ➀ —mJ dv/dt Peak Diode Recovery dv/dt ➂ -5.0 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 0.98(typical) g PD - 90553C The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- age control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switch- ing power supplies, motor controls, inverters, chop- pers, audio amplifiers and high energy pulse circuits. o C A 01/22/01 www.irf.com 1 TO-39 Product Summary Part Number BVDSS RDS(on) ID IRFF9220 -200V 1.5 Ω -2.5A Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling For footnotes refer to the last page IRFF9220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6847 HEXFET TRANSISTORS JANTXV2N6847 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563 200V, P-CHANNEL |
Numéro de pièce similaire - JANTX2N6847_15 |
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Description similaire - JANTX2N6847_15 |
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