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JANTX2N6790 Fiches technique(PDF) 1 Page - International Rectifier |
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JANTX2N6790 Fiches technique(HTML) 1 Page - International Rectifier |
1 / 7 page ![]() Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 3.5 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 2.25 IDM Pulsed Drain Current 14 PD @ TC = 25°C Max. Power Dissipation 20 W Linear Derating Factor 0.16 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 0.242 mJ IAR Avalanche Current 2.2 A EAR Repetitive Avalanche Energy 2.0 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 0.98(typical) g °C A 08/07/07 www.irf.com 1 Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling For footnotes refer to the last page IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ®TRANSISTORS THRU-HOLE (TO-205AF) T0-39 Product Summary Part Number BVDSS RDS(on) ID IRFF220 200V 0.80 Ω 3.5A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on- state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PD - 90427D |
Numéro de pièce similaire - JANTX2N6790_15 |
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Description similaire - JANTX2N6790_15 |
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