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JANTX2N6790 Fiches technique(PDF) 1 Page - International Rectifier

No de pièce JANTX2N6790
Description  Repetitive Avalanche Ratings
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

JANTX2N6790 Fiches technique(HTML) 1 Page - International Rectifier

  JANTX2N6790_15 Datasheet HTML 1Page - International Rectifier JANTX2N6790_15 Datasheet HTML 2Page - International Rectifier JANTX2N6790_15 Datasheet HTML 3Page - International Rectifier JANTX2N6790_15 Datasheet HTML 4Page - International Rectifier JANTX2N6790_15 Datasheet HTML 5Page - International Rectifier JANTX2N6790_15 Datasheet HTML 6Page - International Rectifier JANTX2N6790_15 Datasheet HTML 7Page - International Rectifier  
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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
3.5
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
2.25
IDM
Pulsed Drain Current

14
PD @ TC = 25°C
Max. Power Dissipation
20
W
Linear Derating Factor
0.16
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
‚
0.242
mJ
IAR
Avalanche Current

2.2
A
EAR
Repetitive Avalanche Energy

2.0
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
0.98(typical)
g
°C
A
08/07/07
www.irf.com
1
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
For footnotes refer to the last page
IRFF220
JANTX2N6790
JANTXV2N6790
REF:MIL-PRF-19500/555
200V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®TRANSISTORS
THRU-HOLE (TO-205AF)
T0-39
Product Summary
Part Number
BVDSS RDS(on)
ID
IRFF220
200V
0.80
3.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
PD - 90427D


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