IRF350

2

www.irf.com

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction to Case

—

—

0.83

RthJA

Junction to Ambient

—

—

3 0

Typical socket mount

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

1 4

ISM

Pulse Source Current (Body Diode) ➀

——

5 6

VSD

Diode Forward Voltage

—

—

1.7

V

trr

Reverse Recovery Time

—

—

1200

nS

Tj = 25°C, IF =14A, di/dt ≤100A/µs

QRR

Reverse Recovery Charge

—

—

2 5 0

µc

VDD ≤50V ➃

t on

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

For footnotes refer to the last page

Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

4 00

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.46

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.300

VGS = 10V, ID =9.0A➃

Resistance

—

—

0.400

VGS =10V, ID =14A ➃

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID =250µA

gfs

Forward Transconductance

6.0

—

—

S ( )

VDS > 15V, IDS =9.0A➃

IDSS

Zero Gate Voltage Drain Current

—

—

2 5

VDS=320V, VGS=0V

—

—

250

VDS =320V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS =20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS =-20V

Qg

Total Gate Charge

5 2

—

1 1 0

VGS =10V, ID=14A

Qgs

Gate-to-Source Charge

5.0

—

1 8

nC

VDS =200V

Qgd

Gate-to-Drain (‘Miller’) Charge

2 5

—

6 5

Turn-On Delay Time

—

—

3 5

VDD =200V, ID =14A,

t r

Rise Time

—

—

1 9 0

RG =2.35Ω

Turn-Off Delay Time

—

—

170

tf

Fall Time

—

—

130

LS + LD

Total Inductance

—

6.1

—

Ciss

Input Capacitance

—

2600

VGS = 0V, VDS =25V

Coss

Output Capacitance

—

680

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

250

—

nA

nH

ns

µA

Ω

Measured from the center of

drain pad to center of source

pad