IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1

6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

IXGR 50N60C2

IXGR 50N60C2D1

Fig. 7. Trans conductance

0

10

20

30

40

50

60

70

0

20

40

60

80

100 120 140 160 180 200

I

T

125ºC

Fig. 8. Dependence of Turn-Off

Energy on R

G

0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

2.7

3

2

4

6

8

10

12

14

16

18

R

I

T

V

V

I

I

Fig. 9. De pende nce of Turn-Off

Energy on I

c

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

20

30

40

50

60

70

80

I

R

R

- - - -

V

V

T

T

Fig. 10. De pende nce of Turn-Off

Energy on Tem pe rature

0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

25

35

45

55

65

75

85

95

105 115 125

T

I

R

R

- - - -

V

V

I

I

Fig. 11. Depe ndence of Turn-Off

Sw itching Tim e on R

G

50

100

150

200

250

300

350

400

450

2

4

6

8

10

12

14

16

18

R

I

t

d(off)

t

fi

T

V

V

I

I

Fig. 12. Dependence of Turn-Off

Sw itching Tim e on I

c

40

60

80

100

120

140

160

180

200

20

30

40

50

60

70

80

I

t

d(off)

t

fi

- - - - - -

R

V

V

T

T