1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Switching Transistor

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

–12

Vdc

Collector – Base Voltage

VCBO

–12

Vdc

Emitter – Base Voltage

VEBO

–4.0

Vdc

Collector Current — Continuous

IC

–80

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = –100 µAdc, VBE = 0)

V(BR)CES

–12

—

Vdc

Collector – Emitter Sustaining Voltage(1)

(IC = –10 mAdc, IB = 0)

VCEO(sus)

–12

—

Vdc

Collector – Base Breakdown Voltage

(IC = –100 mAdc, IE = 0)

V(BR)CBO

–12

—

Vdc

Emitter – Base Breakdown Voltage

(IE = –100 mAdc, IC = 0)

V(BR)EBO

–4.0

—

Vdc

Collector Cutoff Current

(VCE = –6.0 Vdc, VBE = 0)

(VCE = –6.0 Vdc, VBE = 0, TA = 65°C)

ICES

—

—

–0.01

–1.0

µAdc

Base Current

(VCE = –6.0 Vdc, VEB = 0)

IB

—

–10

nAdc

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Order this document

by MPS3640/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MPS3640

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER