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W29C020S-70B Fiches technique(PDF) 1 Page - Winbond |
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W29C020S-70B Fiches technique(HTML) 1 Page - Winbond |
1 / 21 page W29C020 256K × 8 CMOS FLASH MEMORY Publication Release Date: February 1998 - 1 - Revision A3 GENERAL DESCRIPTION The W29C020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C020 results in fast write (erase/program) operations with extremely low current consumption compared to other comparable 5-volt flash memory products. The device can also be written (erased and programmed) by using standard EPROM programmers. FEATURES • Single 5-volt write (erase and program) operations • Fast page-write operations − 128 bytes per page − Page write (erase/program) cycle: 10 mS (max.) − Effective byte-write (erase/program) cycle time: 39 µS − Optional software-protected data write • Fast chip-erase operation: 50 mS • Two 8 KB boot blocks with lockout • Typical page write (erase/program) cycles: 100/1K/10K • Read access time: 70/90/120 nS • Ten-year data retention • Software and hardware data protection • Low power consumption − Active current: 25 mA (typ.) − Standby current: 20 µA (typ.) • Automatic write (erase/program) timing with internal VPP generation • End of write (erase/program) detection − Toggle bit − Data polling • Latched address and data • All inputs and outputs directly TTL compatible • JEDEC standard byte-wide pinouts • Available packages: 32-pin 600 mil DIP, 450 mil SOP, TSOP, and 32-pin PLCC |
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