RJP63K2 datasheet(3/7 Pages) RENESAS

No de pièce	RJP63K2

Description	Silicon N Channel IGBT High Speed Power Switching

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Fabricant	RENESAS [Renesas Technology Corp]

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RJP63K2DPP-M0

Preliminary

R07DS0468EJ0200 Rev.2.00

Page 3 of 6

Jun 15, 2011

Main Characteristics

Collector Current IC (A)

Collector to Emitter Saturation Voltage

vs. Collector Current (Typical)

0.1

1

10

1

10

100

25°C

−25°C

Tc = 75

°C

VGE = 15 V

Pulse Test

Typical Transfer Characteristics

0

10

20

30

40

50

02468

10

VCE = 10 V

Pulse Test

Gate to Emitter Voltage VGE (V)

25°C

−25°C

Tc = 75

°C

0

4

8

12

20

16

Collector to Emitter Saturation Voltage

vs. Gate to Emitter Voltage (Typical)

120 A

80 A

IC = 35 A

Gate to Emitter Voltage VGE (V)

0

4

2

6

8

10

Ta = 25°C

Pulse Test

Typical Output Characteristics

100

80

60

40

20

2468

10

Ta = 25°C

Pulse Test

10 V

15 V

0

6 V

6.5 V

7 V

7.5 V

8.5 V

8 V

9 V

V

GE = 5.5 V

Collector to Emitter Voltage VCE (V)

Maximum Safe Operation Area

Collector to Emitter Voltage VCE (V)

1000

100

10

0.1

1

10

100

1

0.01

0.1

1000

10

μs

Ta = 25°C

1 shot pulse

PW

=

100

μs

Numéro de pièce similaire - RJP63K2

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RJP63K2 Fiches technique(PDF) 3 Page - Renesas Technology Corp

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