RJP63K2 datasheet(2/7 Pages) RENESAS

No de pièce	RJP63K2

Description	Silicon N Channel IGBT High Speed Power Switching

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Fabricant	RENESAS [Renesas Technology Corp]

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RJP63K2DPP-M0

Preliminary

R07DS0468EJ0200 Rev.2.00

Page 2 of 6

Jun 15, 2011

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero gate voltage collector current

ICES

—

1

A

VCE = 630 V, VGE = 0

Gate to emitter leak current

IGES

—

±100

nA

VGE = ± 30 V, VCE = 0

Gate to emitter cutoff voltage

VGE(off)

2.5

—

5

V

VCE = 10 V, IC = 1 mA

Collector to emitter saturation

voltage

VCE(sat)

—

1.9

2.4

V

IC = 35 A, VGE = 15 V

Note3

Input capacitance

Cies

—

620

—

pF

Output capacitance

Coes

—

26

—

pF

Reveres transfer capacitance

Cres

—

11

—

pF

VCE = 25 V

VGE = 0

f = 1 MHz

Total gate charge

Qg

—

20

—

nC

Gate to emitter charge

Qge

—

3

—

nC

Gate to collector charge

Qgc

—

7

—

nC

VGE = 15 V

VCE = 300 V

IC = 35 A

td(on)

—

0.02

—

s

tr

—

0.06

—

s

td(off)

—

0.05

—

s

Switching time

tf

—

0.2

—

s

IC = 35 A

RL = 8.5 

VGE = 15 V

RG = 5 

Notes: 3. Pulse test

Numéro de pièce similaire - RJP63K2

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