RJP63K2 datasheet(1/7 Pages) RENESAS

No de pièce	RJP63K2

Description	Silicon N Channel IGBT High Speed Power Switching

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R07DS0468EJ0200 Rev.2.00

Page 1 of 6

Jun 15, 2011

Preliminary Datasheet

RJP63K2DPP-M0

Silicon N Channel IGBT

High Speed Power Switching

Features

 Trench gate and thin wafer technology (G6H-II series)

 Low collector to emitter saturation voltage: V

CE(sat) = 1.9 V typ

 High speed switching: t

r = 60 ns typ, tf = 200 ns typ.

 Low leak current: I

CES = 1 A max

 Isolated package TO-220FL

Outline

RENESAS Package code: PRSS0003AF-A)

(Package name: TO-220FL)

1

2

3

1. Gate

2. Collector

3. Emitter

C

G

E

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to emitter voltage

VCES

630

V

Gate to emitter voltage

VGES

±30

V

Collector current

IC

35

A

Collector peak current

ic(peak)

Note1

200

A

Collector dissipation

PC

Note2

25

W

Junction to case thermal impedance

j-c

5

°C/W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

 10 s, duty cycle  1%

2. Tc = 25

C

R07DS0468EJ0200

Rev.2.00

Jun 15, 2011

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