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RJP63K2 Fiches technique(PDF) 5 Page - Renesas Technology Corp

No de pièce RJP63K2
Description  Silicon N Channel IGBT High Speed Power Switching
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJP63K2 Fiches technique(HTML) 5 Page - Renesas Technology Corp

  RJP63K2 Datasheet HTML 1Page - Renesas Technology Corp RJP63K2 Datasheet HTML 2Page - Renesas Technology Corp RJP63K2 Datasheet HTML 3Page - Renesas Technology Corp RJP63K2 Datasheet HTML 4Page - Renesas Technology Corp RJP63K2 Datasheet HTML 5Page - Renesas Technology Corp RJP63K2 Datasheet HTML 6Page - Renesas Technology Corp RJP63K2 Datasheet HTML 7Page - Renesas Technology Corp  
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RJP63K2DPP-M0
Preliminary
R07DS0468EJ0200 Rev.2.00
Page 5 of 6
Jun 15, 2011
1 m
10 m
100 m
1
10
Pulse Width PW (s)
1
0.3
3
0.1
0.03
0.01
10
Normalized Transient Thermal Impedance vs. Pulse Width
PDM
PW
T
D =
PW
T
D = 1
0.5
0.2
0.1
0.05
0.02
Tc = 25
°C
Waveform
Ic Monitor
Vin Monitor
D.U.T..
Rg
Vin = 15 V
VCC
10%
tr
Ic
Vin
90%
90%
90%
10%
10%
RL
Switching Time Test Circuit
td(on)
td(off)
tf
ton
toff
1 shot
pulse
0.01


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