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RJP63K2 Fiches technique(PDF) 4 Page - Renesas Technology Corp

No de pièce RJP63K2
Description  Silicon N Channel IGBT High Speed Power Switching
Download  7 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJP63K2 Fiches technique(HTML) 4 Page - Renesas Technology Corp

  RJP63K2 Datasheet HTML 1Page - Renesas Technology Corp RJP63K2 Datasheet HTML 2Page - Renesas Technology Corp RJP63K2 Datasheet HTML 3Page - Renesas Technology Corp RJP63K2 Datasheet HTML 4Page - Renesas Technology Corp RJP63K2 Datasheet HTML 5Page - Renesas Technology Corp RJP63K2 Datasheet HTML 6Page - Renesas Technology Corp RJP63K2 Datasheet HTML 7Page - Renesas Technology Corp  
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RJP63K2DPP-M0
Preliminary
R07DS0468EJ0200 Rev.2.00
Page 4 of 6
Jun 15, 2011
Switching Characteristics (Typical) (1)
Gate Resistance Rg (
Ω)
Switching Characteristics (Typical) (3)
Switching Characteristics (Typical) (2)
1
10
100
1000
0
20406080
100
Cies
Coes
Cres
Gate Charge Qg (nC)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Colloctor to Emitter Voltage
Colloctor to Emitter Voltage VCE (V)
Colloctor Current IC (A)
Case Temperature Tc (°C)
800
600
400
200
0
0
16
12
8
4
0
8
16243240
VGE
VCE
VGE = 0 V
f = 1 MHz
Ta = 25°C
10
100
1000
1
10
100
1
10
100
td(off)
td(on)
tf
tr
tr
td(off)
td(on)
tf
tr
10
100
1000
10
100
1000
025
50
75
100
125
150
VCC = 300 V, VGE = 15 V
Rg = 5
Ω, Ta = 25°C
IC = 35 A, VGE = 15 V
RL = 8.5 Ω, Rg = 5 Ω
IC = 35 A, VGE = 15 V
RL = 8.5 Ω, Ta = 25°C
td(off)
tf
td(on)
VCC = 300 V
IC = 35 A
Ta = 25
°C


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