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RJP63K2DPK-M0 Fiches technique(PDF) 5 Page - Renesas Technology Corp

No de pièce RJP63K2DPK-M0
Description  Silicon N Channel IGBT High speed power switching
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJP63K2DPK-M0 Fiches technique(HTML) 5 Page - Renesas Technology Corp

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RJP63K2DPK-M0
Preliminary
R07DS0469EJ0200 Rev.2.00
Page 5 of 6
Jun 15, 2011
Normalized Transient Thermal Impedance vs. Pulse Width
Pulse Width PW (s)
3
1
0.3
0.1
0.03
0.01
1
D = 1
0.5
0.2
0.1
0.05
0.02
Tc = 25
°C
PDM
PW
T
D =
PW
T
θj−c(t) = γs (t) θj−c
θj−c = 2.08°C/W, Tc = 25°C
1 m
10 m
100 m
10
μ
100
μ
Switching Time Test Circuit
Waveform
Ic Monitor
Vin Monitor
D.U.T.
Rg
Vin = 15 V
VCC
10%
tf
tr
td(off)
td(on)
Ic
Vin
90%
90%
90%
10%
10%
ton
toff
RL
1shot pulse
0.01


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