RJH1CF5RDPQ-80 datasheet(3/7 Pages) RENESAS

No de pièce	RJH1CF5RDPQ-80

Description	Silicon N Channel IGBT High Speed Power Switching

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Fabricant	RENESAS [Renesas Technology Corp]

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3 / 7 page

RJH1CF5RDPQ-80

Preliminary

R07DS0355EJ0100 Rev.1.00

Page 3 of 6

May 12, 2011

Main Characteristics

0

20

60

40

80

Collector to Emitter Saturation Voltage

vs. Junction Temparature (Typical)

Junction Temparature Tj (°C)

Typical Output Characteristics

12345

0

Collector to Emitter Voltage VCE (V)

Pulse Test

Ta = 25°C

Collector to Emitter Saturation Voltage

vs. Gate to Emitter Voltage (Typical)

Gate to Emitter Voltage VGE (V)

Typical Transfer Characteristics

02468

10

VCE = 10 V

Pulse Test

Gate to Emitter Voltage VGE (V)

25°C

–25

°C

Tc = 75

°C

Gate to Emitter Cutoff Voltage

vs. Junction Temparature (Typical)

Junction Temparature Tj (°C)

Maximum Safe Operation Area

1000

100

1

10

0.01

0.1

1100

10

10000

1000

Tc = 25

°C

Single pulse

PW = 10

μs

1.5

2.5

2.0

3.0

4.0

3.5

4.5

6

8

10

12

20

16

18

14

IC = 100 A

0

1

2

3

4

5

6

−25

0

25

75

125

50

100

150

VGE = 15 V

Pulse Test

50 A

25 A

IC = 100 A

0

2

6

4

8

10

20

60

40

80

100

−25

0

25

75

125

50

100

150

VCE = 10 V

Pulse Test

1 mA

IC = 10 mA

Ta = 25°C

Pulse Test

50 A

25 A

Ta = 25°C

Pulse Test

V

GE = 7 V

8.5 V

9.5 V

7.5 V

9 V

15 V

13 V

20 V

10 V

Numéro de pièce similaire - RJH1CF5RDPQ-80

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	RJH1CF5RDPQ-80	105Kb / 7P	Silicon N Channel IGBT High Speed Power Switching

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