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MPS2907ARLRPG Fiches technique(PDF) 2 Page - ON Semiconductor |
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MPS2907ARLRPG Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 6 page ![]() MPS2907A Series http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) V(BR)CEO −60 − Vdc Collector−Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO −60 − Vdc Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX − −50 nAdc Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 150°C) ICBO − − −0.01 −10 mAdc Base Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IB − −50 nAdc ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (Note 1) (IC = −500 mAdc, VCE = −10 Vdc) (Note 1) hFE 75 100 100 100 50 − − − 300 − − Collector−Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) − − −0.4 −1.6 Vdc Base −Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − − −1.3 −2.6 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Notes 1 and 2), (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) fT 200 − MHz Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 pF SWITCHING CHARACTERISTICS Turn−On Time (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) (Figures 1 and 5) ton − 45 ns Delay Time td − 10 ns Rise Time tr − 40 ns Turn−Off Time (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) toff − 100 ns Storage Time ts − 80 ns Fall Time tf − 30 ns 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. |
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