MMBT2222LT1G_09 datasheet(3/7 Pages) ONSEMI

No de pièce	MMBT2222LT1G

Description	General Purpose Transistors

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MMBT2222LT1G, MMBT2222ALT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Unit

Max

Min

Symbol

SMALL−SIGNAL CHARACTERISTICS

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)

MMBT2222A

rb, Cc

−

150

ps

Noise Figure

(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)

MMBT2222A

NF

−

4.0

dB

SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time

(VCC = 30 Vdc, VBE(off) = −0.5 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

td

−

10

ns

Rise Time

tr

−

25

Storage Time

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

ts

−

225

ns

Fall Time

tf

−

60

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

5. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 1. Turn−On Time

Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4 ns

*Total shunt capacitance of test jig, connectors, and oscilloscope.

+16 V

-2 V

< 2 ns

0

1.0 to 100

ms,

DUTY CYCLE

≈ 2.0%

1 k

W

+30 V

200

CS* < 10 pF

+16 V

-14 V

0

< 20 ns

1.0 to 100

ms,

DUTY CYCLE

≈ 2.0%

1 k

+30 V

200

CS* < 10 pF

-4 V

1N914

1000

10

20

30

50

70

100

200

300

500

700

1.0 k

0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0

10

20

30

50

70

100

200

300

500 700

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

TJ = 125°C

25

°C

-55

°C

VCE = 1.0 V

VCE = 10 V

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