STK7002U datasheet(2/8 Pages) KODENSHI

No de pièce	STK7002U

Description	N-Channel Enhancement-Mode MOSFET

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Fabricant	KODENSHI [KODENSHI_AUK CORP.]

Site Internet	http://www.kodenshi.co.kr

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KSD-T5D016-001

2

STK7002U

Absolute maximum ratings

(Ta=25

C)

Characteristic

Symbol

Ratings

Unit

Drain-Source voltage

VDSS

60

V

Gate-Source voltage

VGS

20

V

Maximum Drain current

ID

115

mA

Pulsed Drain Current

IDP *

800

mA

Power Dissipation

PD

200

mW

Maximum Junction-to-Ambient

RthJA

625

C/W

Operating Junction and

Storage temperature range

TJ , Tstg

-55~150

C

* PW ≤ 10 ㎲, Duty cycle ≤ 1%

Electrical Characteristics

(Ta=25

C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drian-Source breakdown voltage

BVDSS

ID=10A, VGS=0

60

-

V

Gate-Threshold voltage

VGS(th)

ID=0.25mA, VDS=VGS

1

2.0

2.5

V

Zero Gate voltage drain current

IDSS

VDS=60V, VGS=0

-

1

A

Gate-body leakage

IGSS

VDS=0V, VGS=20V

-

100

nA

Drain-Source on-resistance

RDS(ON) *

VGS=5V, ID=50mA

-

3.2

7.5



VGS=10V, ID=500mA

-

2.4

7.5

Forward transconductance

gfs

VDS=10V, ID=0.2A

80

-

mS

Input capacitance

Ciss

VDS=25V, VGS=0, f=1MHz

-

22

50

pF

Output capacitance

Coss

-

11

25

Reverse Transfer capacitance

Crss

-

2

5

Turn-on time

tON

VDD=30V, ID=0.2A

VGS=10V, RG=25

-

7

20

ns

Turn-off time

tOFF

-

11

20

ns

* PW ≤ 300 ㎲, Duty cycle ≤ 1%

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STK7002U Fiches technique(PDF) 2 Page - KODENSHI_AUK CORP.

STK7002U Fiches technique(HTML) 2 Page - KODENSHI_AUK CORP.

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